With the rapid development of AI large models and high-performance computing, HBM high-bandwidth memory, high-end AI chips, and Chiplet heterogeneous integration have become the core directions of the semiconductor industry. The evolution of Moore's Law has shifted from planar miniaturization to 3D vertical integration. Wafer bonding is precisely the core pillar process for achieving 3D chips, heterogeneous material integration, and advanced packaging. In the wafer bonding process, the high-precision alignment of wafers is the control line that determines the success or failure of the process, the performance of the chip, and the yield of mass production. The alignment accuracy requirements of advanced bonding processes are moving towards higher precision. Even a few nanometers of alignment deviation can lead to chip scrapping, device performance failure and reduced reliability. The core of achieving nanoscale alignment is precisely the piezoelectric nanoscale positioning stage that can help the wafer adjust its pose.

（1）Wafer Bonding is a core process in the front-end manufacturing and advanced packaging of semiconductors. It is a technology that integrates two or more wafers (such as silicon, SiC, GaN and other materials) at the molecular or atomic scale. The main purpose of wafer bonding is to break through the physical limits of traditional chip manufacturing on a 2D plane, achieving higher performance, lower power consumption and more functional integration, such as:

(Note: image from online resouces)

（2）A typical wafer bonding process includes the following key steps:

(Note: image from online resouces)

（3）Core technical indicators of wafer bonding: Alignment accuracy

Among the numerous technical indicators of wafer bonding, alignment accuracy is one of the most crucial parameters that determine the final function and performance of the chip.

Alignment accuracy is directly related to: the effectiveness of electrical interconnection, the quality of chip performance, production yield and cost.

The essence of wafer precision alignment is to make nano-scale precise adjustments to the position of the wafer. The piezo nano-positioning stage is a piezo platform that uses piezo ceramics as the driving source and combines a flexible hinge mechanism to achieve multi-axis precise motion. Its core advantages lie in its small size, non-friction, and fast response speed. After being equipped with high-precision sensors, it can achieve nanometer-level resolution and positioning accuracy, and has extremely high reliability.

During the wafer bonding process, the piezo nano-positioning stage compensates for errors through multi-degree-of-freedom micro-movements and adjusts the wafer to the ideal alignment position. This process needs to simultaneously meet requirements such as high precision, high stability, and fast response. The piezo nano-positioning stage, with its unique driving and structural characteristics, is a core standard component for wafer bonding alignment and attitude adjustment.

CoreMorrow H30 is a 3-axis piezo tip/tilt stage with a central through hole and can achieve XY linear motion and θz rotation. It adopts a frictionless flexible hinge structure design, featuring fast response speed and high closed-loop positioning accuracy, which can meet the adjustment requirements during the wafer alignment process.

Active axis: X, Y, θz

Travel: XY>100μm/axis, θz>0.2mrad

Nanometer-level resolution

Load capacity: >10kg

Optional vacuum version

Custom service available  

For further details, please call +86-451-86268790, or add WeChat ID: 17051647888.